Infrared sensing/Related Articles
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- See also changes related to Infrared sensing, or pages that link to Infrared sensing or to this page or whose text contains "Infrared sensing".
Parent topics
- Infrared light [r]: In physics and engineering, a non-visible portion of the electromagnetic spectrum ranging from wavelengths of 750 nm to 1 mm, between the darkest visible red and the shortest submillimeter wave radar [e]
- Heat [r]: A form of energy that flows spontaneously from hotter to colder bodies that are in thermal contact. [e]
- Remote sensing [r]: Add brief definition or description
- Spectrometry [r]: Spectroscopy is the study of interaction of electromagnetic radiation with matter in those cases where the interaction causes transitions between the allowed states of matter. Spectrometry is the quantitative measurement of spectroscopic signal amplitudes. Light scattering also involves interaction of electromagnetic radiation with matter, however, in light scattering the energy of the electromagnetic field is NOT absorbed by matter (it is scattered). [e]
Subtopics
- Forward-looking infrared [r]: Add brief definition or description
- Thermal imaging [r]: Add brief definition or description
- Infrared guidance [r]: Add brief definition or description
Detectors
- Mercury cadmium telluride [r]: (MCT or HgCdTe) A semiconductor used for infrared light detection, which can be adjusted, in manufacturing, to cover different parts of the infrared band; operated as a thermoelectrically or liquid nitrogen cooled device [e]
- Lead sulfide [r]: (PbS) Naturally occurring as galena, an important ore of lead, it also is used as an infrared light detector optimized for operation in the 1-3.5µm near IR band [e]
- Lead selenide [r]: (PbSe) photoconductive infrared detectors designed for operation in the 2-6 µm wavelength range, with peak response approximately 4 to 4.7 µm [e]
- Indium gallium arsenide [r]: (InGaAs) Semiconductor substrate for infrared light detectors in the 700nm to 1.8µm near infrared band [e]