Metal Oxide Semiconductor Field Effect Transistor

The Metal Oxide Semi-conductor Field Effect Transistor (MOSFET) is a type of FET that consists of three layers: semi-conductor (called bulk), oxide (working as insulator) and metal (conductor, called gate). There are two nodes on opposite sides of the device called source and drain, though the transistor is symmetrical so they can swap their functions. The current between source and drain depends non-linearly on voltage differences between parts of the transistor: gate to source (Vgs), drain to source (Vds) and bulk to source (Vbs).

The structure of the transistor is similar to the one of MOS Capacitor.