Metal Oxide Semiconductor Field Effect Transistor: Difference between revisions

From Citizendium
Jump to navigation Jump to search
imported>Ilya V. Osadchiy
(stub)
 
imported>John R. Brews
(Redirect to Metal-oxide-semiconductor field-effect transistor)
 
(14 intermediate revisions by 3 users not shown)
Line 1: Line 1:
The Metal Oxide Semi-conductor Field Effect Transistor (MOSFET) is a type of [[Field Effect Transistor|FET]] that consists of three layers: [[semi-conductor]] (called bulk), oxide (working as insulator) and metal (conductor, called gate). There are two nodes on opposite sides of the device called source and drain, though the transistor is symmetrical so they can swap their functions. The current between source and drain depends non-linearly on voltage differences between parts of the transistor: gate to source (Vgs), drain to source (Vds) and bulk to source (Vbs).
#REDIRECT [[Metal-oxide-semiconductor field-effect transistor]]
 
The structure of the transistor is similar to the one of [[Metal Oxide Semi-conductor Capacitor|MOS Capacitor]].

Latest revision as of 11:06, 16 January 2011

Redirect to:

Retrieved from "https://citizendium.org/wiki/index.php?title=Metal_Oxide_Semiconductor_Field_Effect_Transistor&oldid=700974"