User:John R. Brews/Sample: Difference between revisions
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|No channel ||< V<sub>T</sub>(S) || ≤ V<sub>T</sub>(D) || Zero or Reverse||Zero or reverse|| Cutoff (Subthreshold) | |No channel ||< V<sub>T</sub>(S) || ≤ V<sub>T</sub>(D) || Zero or Reverse||Zero or reverse|| Cutoff (Subthreshold) | ||
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</div> | </div> | ||
<div class="wikitable" style="float:left"> | <div class="wikitable" style="float:left"> | ||
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!Bipolar transistor!!B-E Junction <br /> Bias !!B-C Junction <br /> Bias !! Mode | !Bipolar transistor!!B-E Junction <br /> Bias !!B-C Junction <br /> Bias !! Mode | ||
|- | |- | ||
|E injects, C collects || Forward || Reverse || | |E injects, C collects || Forward || Reverse || Active | ||
|- | |- | ||
|E ''and'' C inject || Forward || Forward || Saturation | |E ''and'' C inject || Forward || Forward || Saturation | ||
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</div> | </div> | ||
In the bipolar device, the emitter is designed for efficient injection, while the collector is designed to collect with low capacitance between collector and base. Thus, the bipolar device is inherently asymmetrical, and a distinction between forward and reverse modes of operation makes sense. In the MOSFET the source and drain are interchangeable, so reversing polarity simply exchanges the source for the drain. An exception is the power MOSFET, which like the bipolar transistor, has source and drain separately optimized for their particular function. | |||
Revision as of 22:01, 25 May 2011
In electronics, the mode of an electrical device refers to its steady-state bias condition or operating point in the absence of signals. In analog circuits the so-called active mode of the device is chosen by the circuit designer to allow adequate signal amplitude and adequate voltage or current gain, along with acceptable signal distortion. In digital circuits, devices toggle between modes that are either in cutoff mode (off) or in ohmic mode (on), and visit the active mode only briefly during the transition between the on and off modes.
For historical reasons, some confusing nomenclature has arisen that is only slowly being replaced. For both bipolar and MOSFET devices, it is common to refer to the off mode as cutoff. However, the active mode of the bipolar transistor often is called the saturation mode of the MOSFET, while the on mode of the bipolar transistor often is called its saturation mode. This confusion of terminology does nothing to clarify the discussion of circuitry.
| MOS transistor | G-S Bias |
G-D Bias |
S-B Bias |
D-B Bias |
Mode |
|---|---|---|---|---|---|
| Channel at source end only | ≥ VT(S) | ≤ VT(D) | Zero or Reverse | More reverse than S-B | Active (Saturation) |
| Channel at both ends | ≥ VT(S) | > VT(D) | Zero or Reverse | More reverse than S-B | Ohmic |
| No channel | < VT(S) | ≤ VT(D) | Zero or Reverse | Zero or reverse | Cutoff (Subthreshold) |
| Bipolar transistor | B-E Junction Bias |
B-C Junction Bias |
Mode |
|---|---|---|---|
| E injects, C collects | Forward | Reverse | Active |
| E and C inject | Forward | Forward | Saturation |
| No injection | Reverse | Reverse | Cut-off |
| C injects, E collects | Reverse | Forward | Reverse-active |
In the bipolar device, the emitter is designed for efficient injection, while the collector is designed to collect with low capacitance between collector and base. Thus, the bipolar device is inherently asymmetrical, and a distinction between forward and reverse modes of operation makes sense. In the MOSFET the source and drain are interchangeable, so reversing polarity simply exchanges the source for the drain. An exception is the power MOSFET, which like the bipolar transistor, has source and drain separately optimized for their particular function.