CMOS: Difference between revisions
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'''<u>C</u>omplementary <u>M</u>etal <u>O</u>xide <u>S</u>ilicon (CMOS)''' circuit technology is one form of circuitry using MOSFETs, and is used for <u>V</u>ery <u>L</u>arge <u>S</u>cale <u>I</u>ntegration (VLSI) systems.<ref> | '''<u>C</u>omplementary <u>M</u>etal <u>O</u>xide <u>S</u>ilicon (CMOS)''' circuit technology is one form of circuitry using MOSFETs, and is used for <u>V</u>ery <u>L</u>arge <u>S</u>cale <u>I</u>ntegration (VLSI) systems.<ref> | ||
{{cite book |last = Waldner |first = Jean-Baptiste |authorlink = Jean-Baptiste Waldner |title = Nanocomputers and | {{cite book |last = Waldner |first = Jean-Baptiste |authorlink = Jean-Baptiste Waldner |title = Nanocomputers and swarm intelligence |publisher = [[Wiley]]-[[ISTE]] |place = London |date = 2008 | pages = p. 26 |isbn = 1848210094}} | ||
</ref> Thanks to the properties of complementary MOS transistors, this [[silicon planar technology]] has enabled the creation of low-cost and low-energy circuits. These advantages have meant that this technology is recognized as the central technology behind the microelectronics industry. | </ref> Thanks to the properties of complementary MOS transistors, this [[silicon planar technology]] has enabled the creation of low-cost and low-energy circuits. These advantages have meant that this technology is recognized as the central technology behind the microelectronics industry. | ||
Revision as of 16:46, 16 January 2011
Complementary Metal Oxide Silicon (CMOS) circuit technology is one form of circuitry using MOSFETs, and is used for Very Large Scale Integration (VLSI) systems.[1] Thanks to the properties of complementary MOS transistors, this silicon planar technology has enabled the creation of low-cost and low-energy circuits. These advantages have meant that this technology is recognized as the central technology behind the microelectronics industry.
The underlying idea behind CMOS technology is to create pairs of complementary transistors, that is, circuits using both p-channel and n-channel MOSFETs. The result is power efficient circuits that reduce the requirement for heat removal from the system. Each device pair is able to create logic gates based on Boolean principles used in digital electronics.
References
- ↑ Waldner, Jean-Baptiste (2008). Nanocomputers and swarm intelligence. Wiley-ISTE, p. 26. ISBN 1848210094.