Metal-oxide-semiconductor field-effect transistor/Bibliography: Difference between revisions
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*{{cite book |title=Physics of semiconductor devices |author=SM Sze and Kwok K Ng |edition=3rd ed |pages=pp. 293 ''ff'' |chapter=Chapter 6: MOSFETs |publisher=Wiley |year=2007 |url=http://books.google.com/books?id=o4unkmHBHb8C&pg=PA293&lpg=PA293}} The most authoritative text on the subject, an update of the original classic work by SM Sze written at [[Bell Laboratories]] during the time rapid innovation was taking place. | *{{cite book |title=Physics of semiconductor devices |author=SM Sze and Kwok K Ng |edition=3rd ed |pages=pp. 293 ''ff'' |chapter=Chapter 6: MOSFETs |publisher=Wiley |year=2007 |url=http://books.google.com/books?id=o4unkmHBHb8C&pg=PA293&lpg=PA293}} The most authoritative text on the subject, an update of the original classic work by SM Sze written at [[Bell Laboratories]] during the time rapid innovation was taking place. | ||
*{{cite book |title=The physics and modeling of MOSFETS: surface-potential model HiSIM |author=Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ezaki |url=http://books.google.com/books?id=q5vK3B0adloC&printsec=frontcover#v=onepage&q&f=false |isbn=9812568646 |year=2008 |publisher=World Scientific}} Aimed toward the HiSIM compact MOSFET model, this book nonetheless has an extensive discussion of the various phenomena affecting MOSFET behavior and an extensive list of literature describing these phenomena. | |||
Latest revision as of 11:16, 18 June 2011
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- SM Sze and Kwok K Ng (2007). “Chapter 6: MOSFETs”, Physics of semiconductor devices, 3rd ed. Wiley, pp. 293 ff. The most authoritative text on the subject, an update of the original classic work by SM Sze written at Bell Laboratories during the time rapid innovation was taking place.
- Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ezaki (2008). The physics and modeling of MOSFETS: surface-potential model HiSIM. World Scientific. ISBN 9812568646. Aimed toward the HiSIM compact MOSFET model, this book nonetheless has an extensive discussion of the various phenomena affecting MOSFET behavior and an extensive list of literature describing these phenomena.