User:Lars Sundnes Løvlie: Difference between revisions
imported>Lars Sundnes Løvlie |
No edit summary |
||
| (10 intermediate revisions by one other user not shown) | |||
| Line 1: | Line 1: | ||
{{AccountNotLive}} | |||
[[Image:Lars Sundnes Løvlie.jpg|right|thumb|350px|{{#ifexist:Template:Lars Sundnes Løvlie.jpg/Own photo|{{Lars Sundnes Løvlie.jpg/Own photo.}}<br/>|}}Lars Sundnes Løvlie]] | [[Image:Lars Sundnes Løvlie.jpg|right|thumb|350px|{{#ifexist:Template:Lars Sundnes Løvlie.jpg/Own photo|{{Lars Sundnes Løvlie.jpg/Own photo.}}<br/>|}}Lars Sundnes Løvlie]] | ||
| Line 12: | Line 13: | ||
This bio will be updated with more information in time. | This bio will be updated with more information in time. | ||
List of papers: | |||
*''Interface states in 4H- and 6H-SiC MOS capacitors: a comparative study between conductance spectroscopy and thermal dielectric relaxation current technique'', L. S. Løvlie, I. Pintilie, S. Kumar C. P., U. Grossner, B. G. Svensson, S. Beljakowa, S. A. Reshanov, M. Krieger, G. Pensl. ECSCRM 2008. | |||
[[Category:CZ Authors|Løvlie, Lars Sundnes]][[Category:Engineering Authors|Løvlie, Lars Sundnes]] [[Category:Physics Authors|Løvlie, Lars Sundnes]] | [[Category:CZ Authors|Løvlie, Lars Sundnes]][[Category:Engineering Authors|Løvlie, Lars Sundnes]] [[Category:Physics Authors|Løvlie, Lars Sundnes]] | ||
| Line 21: | Line 25: | ||
= Test-page for articles (ToDo) = | = Test-page for articles (ToDo) = | ||
<hr> | |||
<hr> | <hr> | ||
== Silicon Carbide == | == Silicon Carbide == | ||
< | [[Image:Silicon Carbide polycrystal.jpg|right|thumb|300px|{{#ifexist:Template:Silicon Carbide polycrystal.jpg/credit|{{Silicon Carbide polycrystal.jpg/credit}}<br/>|}}Polycrystalline SiC for mechanical applications.]] | ||
[[Image:Silicon carbide single crystal.jpg|right|thumb|300px|{{#ifexist:Template:Silicon carbide single crystal.jpg/credit|{{Silicon carbide single crystal.jpg/credit}}<br/>|}}Single crystalline SiC for electronic purposes. Image taken before cutting into thin wafers.]] | |||
Silicon carbide (SiC) is a mineral which occurs extremely rarely in nature. When it does it is referred to as [[moissanite]]. It is probably most commonly known for its use as an abrasive due to the extreme hardness of the material, which is only exceeded by the hardness of diamond. | |||
However, SiC is also being researched extensively for applications as a semiconductor for applications requiring high power, high frequency or a large degree of chemical inertness. | |||
== History == | == History == | ||
| Line 46: | Line 56: | ||
== References == | == References == | ||
<hr> | |||
== Semiconductor == | == Semiconductor == | ||
<hr> | |||
== Silicon == | == Silicon == | ||
<hr> | |||
== Point defects in silicon == | == Point defects in silicon == | ||
<hr> | |||
== Silicon radiation detectors == | == Silicon radiation detectors == | ||
<hr> | |||
Latest revision as of 03:14, 22 November 2023
The account of this former contributor was not re-activated after the server upgrade of March 2022.
Bio
Hi!
My name is Lars Løvlie. I am very interested in contributing to the Citizendium, since my efforts to contribute to Wikipedia has left me frustrated at the lack of experts to end deadlocked discussions. I am hoping that the more ordered society in CZ will keep me more motivated.
Born and raised in Volda, Norway [1], I live in Oslo[2] and work on a phd in semiconductor physics at the University of Oslo, Centre for materials research and nanotechnology[1]. I hold an M.Sc. in electrical engineering (semiconductors).
This bio will be updated with more information in time.
List of papers:
- Interface states in 4H- and 6H-SiC MOS capacitors: a comparative study between conductance spectroscopy and thermal dielectric relaxation current technique, L. S. Løvlie, I. Pintilie, S. Kumar C. P., U. Grossner, B. G. Svensson, S. Beljakowa, S. A. Reshanov, M. Krieger, G. Pensl. ECSCRM 2008.
References
Test-page for articles (ToDo)
Silicon Carbide
Silicon carbide (SiC) is a mineral which occurs extremely rarely in nature. When it does it is referred to as moissanite. It is probably most commonly known for its use as an abrasive due to the extreme hardness of the material, which is only exceeded by the hardness of diamond.
However, SiC is also being researched extensively for applications as a semiconductor for applications requiring high power, high frequency or a large degree of chemical inertness.